Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices

Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically the effet AlN interlayer electronic and electric characteristics using Nextnano software. 2D–electron gas density In0.17Al0.83N/AlN/GaN HEMTs is investigated through dependence various layer thickness, report calculations I-V characteristics, with 1.5 nm find highest maximum output current 1.81 A/mm at Vgs 1 V, more than 450 mS/mm as transconductance peak. Results are in agreement experimental data.